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| SI2303DS Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) -30 rDS(on) (W) 0.240 @ VGS = -10 V 0.460 @ VGS = -4.5 V ID (A) -1.7 -1.3 TO-236 (SOT-23) G 1 3 D S 2 Top View SI2303DS (A3)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C) ( ) (surface mounted on FR4 board t v 5 sec) board, Pulsed Drain Currenta Continuous Source Current (MOSFET Diode Conduction) (surface mounted on FR4 board, t v 5 sec) Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit -30 "20 -1.7 -1.4 -10 -1.25 1.25 0.8 -55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient (surface mounted on FR4 board, t v 5 sec) Maximum Junction-to-Ambient (surface mounted on FR4 board) Notes a. Pulse width limited by maximum junction temperature. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70770 S-49557--Rev. B, 27-Apr-98 www.vishay.com S FaxBack 408-970-5600 Symbol RthJA Typical 100 166 Unit _C/W 2-1 SI2303DS Vishay Siliconix MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain Source On State Resistancea Drain-Source On-State Forward Transconductancea Diode Forward Voltage V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS( ) DS(on) gfs VSD VGS = 0 V, ID = -10 mA VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "20 V VDS = -30 V, VGS = 0 V VDS = -30 V, VGS = 0 V, TJ = 55_C VDS w -5 V, VGS = -10 V VGS = -10 V, ID = -1.7 A VGS = -4.5 V, ID = -1.3 A VDS = -10 V, ID = -1.7 A IS = -1.25 A, VGS = 0 V -6 0.190 0.240 2.4 -0.8 -1.2 0.240 0.460 W S V -30 V -1.0 "100 -1 -10 nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Qg Qgs Qgd Ciss Coss Crss VDS = -15 V VGS = 0 V, f = 1 MHz 15 V, V MH VDS = -15 V VGS = -10 V ID = -1.7 A 15 V, 10 V, 17 5.8 0.8 1.5 226 87 19 pF F 10 nC C Switchingb Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) tr td(off) tf VDD = -15 V, RL = 15 W 15 V, ID ^ -1 A, VGEN = -10 V RG = 6 W 1A 10 V, 9 9 18 6 20 20 ns 35 20 Notes a. Pulse test: PW v300 ms duty cycle v2%. b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 70770 S-49557--Rev. B, 27-Apr-98 SI2303DS Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 10 VGS = 10 thru 6 V 8 I D - Drain Current (A) I D - Drain Current (A) 5V 6 8 25_C 6 125_C 10 TC = -55_C Transfer Characteristics 4 4V 4 2 3V 0 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) 2 0 0 1 2 3 4 5 6 7 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.8 500 Capacitance r DS(on) - On-Resistance ( W ) 400 0.6 VGS = 4.5 V C - Capacitance (pF) 300 Ciss 200 Coss 100 Crss 0.4 VGS = 10 V 0.2 0 0 2 4 6 8 10 0 0 6 12 18 24 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 1.7 A 8 1.8 On-Resistance vs. Junction Temperature VGS = 10 V ID = 1.7 A r DS(on) - On-Resistance (W) (Normalized) 2 3 4 5 6 1.6 1.4 6 1.2 4 1.0 2 0.8 0 0 1 Qg - Total Gate Charge (nC) 0.6 -50 0 50 100 150 TJ - Junction Temperature (_C) www.vishay.com S FaxBack 408-970-5600 Document Number: 70770 S-49557--Rev. B, 27-Apr-98 2-3 SI2303DS Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 10 1.0 MOSFET On-Resistance vs. Gate-to-Source Voltage r DS(on) - On-Resistance ( W ) I S - Source Current (A) 0.8 TJ = 150_C 0.6 ID = 1.7 A 0.4 TJ = 25_C 0.2 1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.5 0.4 8 V GS(th) Variance (V) 0.3 Power (W) 0.2 ID = 250 mA 0.1 0.0 2 -0.1 -0.2 -50 0 0 50 TJ - Temperature (_C) 100 150 0.01 6 10 Single Pulse Power TC = 25_C Single Pulse 4 0.10 Time (sec) 1.00 10.00 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Normalized Thermal Transient Impedance, Junction-to-Ambient 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 30 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 2-4 Document Number: 70770 S-49557--Rev. B, 27-Apr-98 |
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